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Multiscale Modeling of Polycrystalline Silicon

Chen, Y., Lee, J.D. and Eskandarian, A. (2003) “Multiscale Modeling of Polycrystalline Silicon”, Proceedings of IMECE’03 2003 ASME International Mechanical Engineering Congress & Exposition, Washington, D.C., November 16-21.

Abstract: In this paper, a statistical model for polycrystalline material is adopted. Each grain is modeled as crystallized solid by the well-established micromorphic theory, while the grain boundaries are modeled as in its amorphous phase by classical continuum theory. Size-dependent material properties of silicon are investigated. Finite element analysis of thermomechanical coupling phenomenon in polycrystalline silicon is performed and numerical results are presented.